GaN Semiconductor Devices Market Share 2023-2029
The global GaN Semiconductor Devices market was valued at US$ 1040.4 million in 2022 and is projected to reach US$ 4245.5 million by 2029, at a CAGR of 22.3% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
GaN semiconductor devices are electronic components that utilize Gallium Nitride as the semiconductor material. GaN, known for its wide-bandgap properties, offers significant advantages over traditional semiconductors like silicon.
These devices are designed to operate under high frequencies, high voltages, and high-temperature conditions, making them suitable for a wide range of applications, including power electronics, RF devices, and optoelectronics. GaN semiconductor devices provide several benefits such as high power density, low on-resistance, high breakdown voltage, and fast switching speed.
In the field of power electronics, GaN semiconductor devices find applications in power converters, inverters, and motor drives. Compared to silicon-based devices, GaN devices enable higher energy efficiency, compact form factors, and improved overall performance.
Total Market by Segment:
Global GaN Semiconductor Devices Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (K Units)
- GaN Power Devices:
- Schottky Diodes: This type of GaN power device holds 30% of the GaN power device market. Schottky diodes are known for their fast switching speed, low forward voltage drop, and high-temperature operation capabilities. They are commonly used in power rectification, voltage clamping, and power conversion applications.
- Field Effect Transistors (FETs): FETs dominate the GaN power device market, accounting for 70% of the market share. GaN FETs offer high power density, low on-resistance, and high-speed switching characteristics. They are widely used in applications such as power supplies, electric vehicles, renewable energy systems, and wireless charging.
2. GaN RF Devices:
- Power Amplifiers (PA): Power amplifiers using GaN technology hold the largest share, 40%, in the GaN RF device market. GaN-based power amplifiers deliver high output power, high efficiency, and wide bandwidth. They are extensively used in wireless communication systems, including cellular base stations, radar systems, and satellite communication.
- Low Noise Amplifiers (LNA): LNAs account for around 20% of the GaN RF device market. GaN LNAs offer low noise figure, high linearity, and excellent signal amplification capabilities. They are widely employed in sensitive RF systems such as receivers for wireless communication, radar, and satellite applications.
- RF Switches: GaN-based RF switches also hold 20% of the GaN RF device market. These switches provide fast switching speed, low insertion loss, and high isolation. They are commonly used in communication systems for signal routing, impedance matching, and antenna switching.
- Monolithic Integrated Circuits (MMIC): GaN MMICs make up around 20% of the GaN RF device market. These integrated circuits incorporate various active and passive components on a single chip, providing compactness and improved performance. GaN MMICs are utilized in high-frequency applications such as radar systems, wireless communication, and aerospace and defense technologies.
Further, the report presents profiles of competitors in the market, key players include:
- Toshiba
- Wolfspeed
- GaN Systems
- Infineon Technologies
- Efficient Power Conversion (EPC)
- Mitsubishi Electric
- STMicroelectronics
- Transphorm
- NexGen
- ROHM Semiconductor
- Sumitomo Electric Device Innovations Inc (SEDI)
- Qorvo
- MACOM
- Renesas Electronics
- Dynax Semiconductor
- Jiangsu Corenergy Semiconductor
- Ampleon
- Innoscience
- NXP Semiconductors
- NTT Advanced Technology Corporation
- Texas Instruments Incorporated
Key Questions:
- What was the global market value of GaN semiconductor devices in 2022?
- The global GaN semiconductor devices market was valued at US$ 1040.4 million in 2022.
- What is the projected market value for GaN semiconductor devices by 2029?
- The GaN semiconductor devices market is projected to reach US$ 4245.5 million by 2029.
- What is the expected compound annual growth rate (CAGR) for the GaN semiconductor devices market during the forecast period?
- The GaN semiconductor devices market is expected to grow at a CAGR of 22.3% during the forecast period.
- Who are the key players in the global GaN semiconductor devices market?
- Key players in the GaN semiconductor devices market include Toshiba, Wolfspeed, GaN Systems, Infineon Technologies, and others.
- What is the market share of the top five manufacturers in the global GaN semiconductor devices market?
- The top five manufacturers hold a market share of over 88% in the global GaN semiconductor devices market.
- Which region is the largest producer of GaN semiconductor devices?
- North America is the largest producer of GaN semiconductor devices and holds a market share of over 45%.
- What is the largest segment in terms of product in the GaN semiconductor devices market?
- GaN RF devices is the largest segment in the GaN semiconductor devices market, with a market share of over 82%.
- What is the largest application segment in the GaN semiconductor devices market?
- Consumer electronics is the largest application segment in the GaN semiconductor devices market, with a market share of over 63%.